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| STP3HNK90Z - STF3HNK90Z N-CHANNEL 900V - 3.5 - 3A TO-220 - TO-220FP Zener-Protected SuperMESHTMPower MOSFET TYPE STP3HNK90Z STF3HNK90Z VDSS 900 V 900 V RDS(on) < 4.2 < 4.2 ID 3A 3A Pw 90 W 25 W TYPICAL RDS(on) = 3.5 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 2 TO-220 TO-220FP DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE STP3HNK90Z STF3HNK90Z MARKING P3HNK90Z F3HNK90Z PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE August 2003 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/10 STP3HNK90Z - STF3HNK90Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter STP3HNK90Z Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -55 to 150 3 1.89 12 90 0.72 3000 4.5 2500 900 900 30 3 (*) 1.89 (*) 12 (*) 25 0.2 Value STF3HNK90Z V V V A A A W W/C V V/ns V C Unit ( ) Pulse width limited by safe operating area (1) ISD 3A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.38 62.5 300 TO-220FP 5 C/W C/W C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 3 200 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs= 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 2/10 STP3HNK90Z - STF3HNK90Z ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30 V VDS = VGS, ID = 50 A VGS = 10 V, ID = 1.5 A 3 3.75 3.5 Min. 900 1 50 10 4.5 4.2 Typ. Max. Unit V A A A V DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 1.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1.9 690 71 14.4 88 23 28 42 27 26 5.7 13.9 35 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC VGS = 0V, VDS = 0V to 720V VDD = 450 V, ID = 1.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 720V, ID = 3 A, VGS = 10V SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A, VGS = 0 ISD = 3 A, di/dt = 100A/s VDD = 50 V, Tj = 25C (see test circuit, Figure 5) ISD = 3 A, di/dt = 100A/s VDD = 50 V, Tj = 150C (see test circuit, Figure 5) 494 2.4 9.8 628 3.2 10.2 Test Conditions Min. Typ. Max. 3 12 1.6 Unit A A V ns C A ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/10 STP3HNK90Z - STF3HNK90Z Safe Operating Area For TO-220 Thermal Impedance For TO-220 Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/10 STP3HNK90Z - STF3HNK90Z Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/10 STP3HNK90Z - STF3HNK90Z Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature 6/10 STP3HNK90Z - STF3HNK90Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STP3HNK90Z - STF3HNK90Z TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q 8/10 STP3HNK90Z - STF3HNK90Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 G 9/10 STP3HNK90Z - STF3HNK90Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 10/10 |
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